TIP150, tip151, tip152 npn silicon power darlingtons
1 june 1973 - revised september 2002 specifications are subject to change without notice. 80 w at 25c case temperature 7 a continuous collector current 10 a peak collector current maximum v ce(sat) of 2 v at i c = 5 a i cex(sus) 7 a at rated v (br)ceo absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. this value applies for t p 5 ms, duty cycle 10%. 2. derate linearly to 150c case temperature at the rate of 0.64 w/c. 3. derate linearly to 150c free air temperature at the rate of 16 mw/c. rating symbol value unit collector-base voltage (i e = 0) TIP150 tip151 tip152 v cbo 300 350 400 v collector-emitter voltage (i b = 0) TIP150 tip151 tip152 v ceo 300 350 400 v emitter-base voltage v ebo 8v continuous collector current i c 7a peak collector current (see note 1) i cm 10 a continuous base current i b 1.5 a continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 80 w continuous device dissipation at (or below) 25c free air temperature (see note 3) p tot 2w operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c lead temperature 3.2 mm from case for 10 seconds t l 260 c b c e to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdtraca 1 2 3 this series is obsolete and not recommended for new designs. obsolete
TIP150, tip151, tip152 npn silicon power darlingtons 2
june 1973 - revised september 2002 specifications are subject to change without notice. notes: 4. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 5. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25c case temperature parameter test conditions min typ max unit v (br)cbo collector-base breakdown voltage i c = 1 ma i e = 0 TIP150 tip151 tip152 300 350 400 v v (br)ceo collector-emitter breakdown voltage i c = 10 ma (see note 4) i b = 0 TIP150 tip151 tip152 300 350 400 v i ceo collector-emitter cut-off current v ce =300 v v ce = 350 v v ce = 400 v i b =0 i b =0 i b =0 TIP150 tip151 tip152 250 250 250 a i cex(sus) collector-emitter sustaining current v clamp = v (br)ceo 7a i ebo emitter cut-off current v eb = 8 v i c =0 15 ma h fe forward current transfer ratio v ce = 5 v v ce = 5 v v ce = 5 v i c = 2.5 a i c = 5a i c = 7a (see notes 4 and 5) 150 50 15 v ce(sat) collector-emitter saturation voltage i b = 10 ma i b = 100 ma i b = 250 ma i c = 1a i c = 2a i c = 5a (see notes 4 and 5) 1.5 1.5 2 v v be(sat) base-emitter saturation voltage i b = 100 ma i b = 250 ma i c = 2a i c = 5a (see notes 4 and 5) 2.2 2.3 v v ec parallel diode forward voltage i e = 7 a i b = 0 (see notes 4 and 5) 3.5 v h fe small signal forward current transfer ratio v ce = 5 v i c = 0.5 a f = 1 khz 200 | h fe | small signal forward current transfer ratio v ce = 5 v i c = 0.5 a f = 1 mhz 10 c ob output capacitance v cb = 10 v i e = 0 f = 1 mhz 100 pf thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1.56 c/w r ja junction to free air thermal resistance 62.5 c/w c c thermal capacitance of case 0.9 j/c inductive-load-switching characteristics at 25c case temperature parameter test conditions ? min typ max unit t sv voltage storage time i c = 5 a v (clamp) = v (br)ceo i b(on) = 250 ma r be = 47 ? 3.9 s t si current storage time 4.7 s t rv voltage transition time 1.2 s t ti current transition time 1.2 s t xo cross-over time 2.0 s obsolete
TIP150, tip151, tip152 npn silicon power darlingtons 3
june 1973 - revised september 2002 specifications are subject to change without notice. parameter measurement information figure 1. functional test circuit figure 2. functional test waveforms figure 3. switching test circuit driver and current limiting circuit 0.22 f v z 24 v l = 7 mh 100 ? 0.2 ? tut v clamp collector emitter voltage 16.6 ms 11.6 ms 0 0 0 0 input signal base current collector current 24 v i b i c 40 v 12 v 0.056 ? irf140 1 k ? 47 ? tut by205-600 7 mh v clamp adjust for i b = 10 v v in obsolete
TIP150, tip151, tip152 npn silicon power darlingtons 4
june 1973 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 4. figure 5. figure 6. figure 7. typical dc current gain vs collector current i c - collector current - a 04 10 10 h fe - typical dc current gain 10 100 1000 10000 tcd150aa v ce = 5 v t p = 300 s, duty cycle <2% t c = 125c t c = 25c t c = -30c collector-emitter saturation voltage vs collector current i c - collector current - a 04 10 10 v ce(sat) - collector-emitter saturation voltage - v 01 10 10 tcd150ab i c / i b = 20 t p = 300 s, duty cycle < 2% t c = 125c t c = 25c t c = -30c base-emitter saturation voltage vs collector current i c - collector current - a 04 10 10 v be(sat) - base-emitter saturation voltage - v 10 15 20 25 30 tcp150ac t c = -30c t c = 25c t c = 125c i c / i b = 20 t p = 300s, duty cycle < 2% collector cut-off current vs case temperature t c - case temperature - c -50 -25 0 25 50 75 100 125 i ceo - collector cut-off current - a 10 10 100 1000 tcd150ad v ce = 400 v i b = 0 obsolete
TIP150, tip151, tip152 npn silicon power darlingtons 5
june 1973 - revised september 2002 specifications are subject to change without notice. maximum safe operating regions figure 8. thermal information figure 9. maximum forward-bias safe operating area v ce - collector-emitter voltage - v 10 10 100 1000 i c - collector current - a 001 0.1 10 10 100 sad150aa TIP150 tip151 tip152 t p = 0.1 ms t p = 1 ms t p = 5 ms dc operation maximum power dissipation vs case temperature t c - case temperature - c 0 25 50 75 100 125 150 p tot - maximum power dissipation - w 0 20 40 60 80 100 tid150aa obsolete
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